CGD65B130S2-T13
CGD65B130S2-T13
Part number:
4768-CGD65B130S2-T13TR-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Type
650V GAN HEMT,
Encapsulation
Package
Tape & Reel (TR)
RoHS:
NO
Quantity
5085
$3.2100
Minimun: 1
multiples: 1
Quantity
Price
Total
1
$3.2100
$3.2100
10
$2.6950
$26.9500
100
$2.1800
$218.0000
500
$1.9400
$970.0000
1000
$1.6600
$1,660.0000
2000
$1.5650
$3,130.0000
5000
$1.5000
$7,500.0000
CGD65B130S2-T13 NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
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